This book reports the establishment of a single-atomic layer metal of In and a novel (In, Mg) ultrathin film on Si(111) surfaces. A double-layer phase of In called “rect” has been extensively investigated as a two-dimensional metal. Another crystalline phase called “hex” was also suggested, but it had not been established due to difficulty in preparing the sample. The author succeeded in growing the large and high-quality sample of the hex phase and revealed that it is a single-layer metal. The author also established a new triple-atomic layer (In, Mg) film with a nearly freestanding character by Mg deposition onto the In double layer. This work proposes a novel method to decouple ultrathin metal films from Si dangling bonds.
The present study demonstrates interesting properties of indium itself, which is a p-block metal both with metallicity and covalency. In this book, readers also see principles of various surface analysis techniques and learn how to use them andanalyze the results in the real systems. This book is useful to researchers and students interested in surface science, particularly ultrathin metal films on semiconductor surfaces.

lgrsnf/473.pdf

Springer Nature Singapore Pte Ltd Fka Springer Science + Business Media Singapore Pte Ltd

Springer Nature, Singapore, 2022

Singapore, Singapore

S.l, 2022

Supervisor’s Foreword
Abstract
Acknowledgements
Contents
1 Introduction
1.1 Ultrathin Metal Films
1.2 Thin Indium Films on Si(111)
1.3 In/Si(111) Surface Superstructures
1.4 Bonding Between Metal Layers and Substrates
1.5 Outline of the Thesis
References
2 Experimental Methods
2.1 Low-Energy Electron Diffraction (LEED)
2.1.1 Kinematic Theory
2.1.2 Dynamical Theory
2.1.3 Apparatus
2.2 Scanning Tunneling Microscopy (STM)
2.2.1 Theory and Apparatus
2.3 Angle-Resolved Photoelectron Spectroscopy (ARPES)
2.3.1 Theory
2.3.2 Apparatus
2.4 Four-Point-Probe (4PP) Conductivity Measurements
2.4.1 Theory and Apparatus
2.5 Experiments
2.5.1 Chamber 1 (ARPES, LEED)
2.5.2 Chamber 2 (ARPES, LEED)
2.5.3 Chamber 3 (STM)
2.5.4 Chamber 4 (4PP Conductivity Measurements, LEED)
2.5.5 Chamber 5 (LEED)
2.5.6 Samples
References
3 Structure and Electronic Properties of In Single-Layer Metal on Si(111)
3.1 Introduction
3.2 Preparation of the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Hex and left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Striped Phases
3.3 The Atomic Structure of the In/Si(111) ``left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )''-Hex Phase
3.3.1 LEED and STM Observations
3.3.2 Structure Model
3.3.3 First-Principles Calculation
3.4 Electronic Structure and Phase Transition of the Indium Monolayer on Si(111)
3.4.1 Electronic Structure of the In/Si(111) Hex Phase
3.4.2 Phase Transition of the In/Si(111) Hex Phase
3.5 Summary
References
4 Structure and Electronic Properties of Ultrathin (In, Mg) Films on Si(111)
4.1 Introduction
4.2 Structure Change by Mg Deposition onto the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Rect Phase
4.2.1 LEED and STM Observations
4.2.2 Structure Determination by First-Principles Calculation
4.3 The Electronic Structure of the (In, Mg)/Si(111) left parenthesis StartRoot 3 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt3 timessqrt3 ) Phase
4.3.1 ARPES Experiments
4.3.2 Band Calculation
4.4 Summary
References
5 Conclusions
Appendix Curriculum Vitae

Springer Theses
Erscheinungsdatum: 09.11.2022

2024-04-11